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| SUD70N02-03P New Product Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0033 @ VGS = 10 V 0.0053 @ VGS = 4.5 V ID (A)a 39 31 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High-Efficiency 100% Rg Tested APPLICATIONS D Synchronous Buck Converter - Low-Side - Secondary Synchronous Rectifier TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD70N02-03P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TC = 25_C TA = 25_C TC= 25_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 20 "20 39a 70b 100 37 8.3a 100 - 55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package Document Number: 72246 S-31984--Rev. B, 13-Oct-03 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 15 40 1.2 Maximum 18 50 1.5 Unit _C/W C/W 1 SUD70N02-03P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On State Drain-Source On-State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 15 0.0042 50 0.0026 0.0033 0.0047 0.0053 S W 20 0.8 3.0 "100 1 50 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 0.2 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W VDS = 10 V, VGS = 4.5 V, ID = 50 A f = 1.0 MHz 0.5 VGS = 0 V, VDS = 10 V, f = 1 MHz 5100 1650 800 1.1 40 14 13 15 11 45 15 25 20 70 25 ns 1.8 60 nC W p pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 50 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 45 100 1.5 90 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 160 140 120 I D - Drain Current (A) 100 80 60 40 20 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) www.vishay.com 3V I D - Drain Current (A) VGS = 10 thru 5 V 4V 160 140 120 100 80 60 TC = 125_C 40 20 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Document Number: 72246 S-31984--Rev. B, 13-Oct-03 25_C - 55_C Transfer Characteristics 2 SUD70N02-03P New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance 200 TC = - 55_C r DS(on)- On-Resistance ( W ) 160 25_C 120 125_C 0.005 0.004 0.003 0.002 0.001 0.000 0 10 20 30 40 50 60 0 20 40 60 80 100 VGS = 4.5 V 0.006 Vishay Siliconix On-Resistance vs. Drain Current g fs - Transconductance (S) VGS = 10 V 80 40 0 ID - Drain Current (A) 7000 6000 Ciss C - Capacitance (pF) 5000 4000 3000 2000 Crss 1000 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Coss ID - Drain Current (A) 10 VDS = 10 V ID = 50 A Capacitance Gate Charge V GS - Gate-to-Source Voltage (V) 8 6 4 2 0 0 10 20 30 40 50 60 70 80 Qg - Total Gate Charge (nC) 1.8 1.6 r DS(on)- On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 - 50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 20 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage TJ = 150_C TJ = 25_C 10 - 25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) Document Number: 72246 S-31984--Rev. B, 13-Oct-03 www.vishay.com 3 SUD70N02-03P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 40 New Product 1000 Limited by rDS(on) 100 I D - Drain Current (A) Safe Operating Area 32 I D - Drain Current (A) 10, 100 ms 1 ms 10 ms 100 ms 1s 10 s 100 s dc 24 10 16 1 8 0.1 TA = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature (_C) 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) Document Number: 72246 S-31984--Rev. B, 13-Oct-03 www.vishay.com 4 |
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